428
China scientists develop flash memory 10,000× faster than current tech
(interestingengineering.com)
this post was submitted on 19 Apr 2025
428 points (92.5% liked)
Technology
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This sounds like that material would be more useful in high performance radars, not as flash memory
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Brother, have you heard of buses? Even INSIDE cpus/socs bus speeds are a limitation. Also i fucking hate how the first thing people mention now is how ai could benefit from a jump in computing power.
Edit: I havent dabbled that much in high speed stuff yet but isnt the picosecond range so fast that the capacitance of simple traces and connectors between chips influence the rising and falling edge of chips?
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Well, I'll never see it, unless TI or another American company designs their own version.
Or they can do what they normally do, steal it and then sue to be considered the original invento/founder and then make a Hollywood film about how they invented it/found it.
It's called an iPod, it's not an mp3 player.
They are called airpods, they are not earbuds.
It's called an airplane, not an aeroplane.
AI AI AI AI
Yawn
Wake me up if they figure out how to make this cheap enough to put in a normal person's server.
normal person’s server.
I’m pretty sure I speak for the majority of normal people, but we don’t have servers.
You... you don't? Surely there's some mistake, have you checked down the back of your cupboard? Sometimes they fall down there. Where else do you keep your internet?
Appologies, I'm tired and that made more sense in my head.
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Ikr...Dude thinks we're restaurants or something.
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By tuning the “Gaussian length” of the channel, the team achieved two‑dimensional super‑injection, which is an effectively limitless charge surge into the storage layer that bypasses the classical injection bottleneck.
They're just copying the description of the turbo encabulator.
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Wow, finally graphene has been cracked. Exciting times for portable low-energy computing
Is that fast enough to put an LLM in swap and have decent performance?
Note that this in theory speaks to performance of a non volatile memory. It does not speak to cost.
We already have a faster than NAND non volatile storage in phase change memory . It failed due to expense.
If this thing is significantly more expensive even than RAM, then it may fail even if it is everything it says it is. If it is at least as cheap as ram, it'll be huge since it is faster than RAM and non volatile.
Swap is indicated by cost, not by non volatile characteristics.